Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. okumak kayıt olmadan

Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

Ders Kitapları

Heavily doped silicon is required for devices such as PowerMOSFETs. For the devices to be as sufficient as possible it is necessary to lower the electrical resistivity of the silicon substrate as low as possible. Yet, during the growth of heavily n-type doped silicon by the Czochralski method dislocation formation occurs frequently, reducing yield. Thus this work covers the topics intrinsic point defects, electrical activity of dopant atoms, spreading of dislocations and facet growth. Each topic is discussed in regard of their possible impact on the formation of the dislocations. In doing so, the control of facet growth is found to be most crucial to prevent the formation of the dislocations.

---

pdf kindle epub doc

---

---

ROBERT H BORK 18,9 x 0,4 x 24,6 cm 15 x 0,5 x 22 cm WADE H MCCREE 18,9 x 0,2 x 24,6 cm Additional Contributors Kolektif 29 Ekim 2011 1 Ocak 2017 3 Ocak 2017 18,9 x 0,3 x 24,6 cm Mdpi AG 18,9 x 0,5 x 24,6 cm 18,9 x 0,6 x 24,6 cm 30 Ekim 2011 28 Ekim 2011 28 Şubat 2018 ERWIN N GRISWOLD

---

okumak okumak kayıt olmadan