Syntheses of ITO Thin Film by DC-sputtering as Gas Sensor: prepared of indium oxide with different doping concentration with sn by using DC- sputtering deposition okumak kayıt olmadan

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Syntheses of ITO Thin Film by DC-sputtering as Gas Sensor: prepared of indium oxide with different doping concentration with sn by using DC- sputtering deposition

In this work we used indium oxide because In2O3 and doped (ITO) In2O3 and doped In2O3 (ITO) are widely known for their ability to allow trace level detection of oxidizing and toxic gases. It is a wide band gap (34.6eV). A semiconductor has n-type behavior in its non-stoichiometric form due to oxygen vacancy-induced doping with low resistivity, high optical transparency in the visible range of the spectrum, excellent electrical properties. It has a good adherence to the substrate surface and high chemical inertness, and In2O3 can appear in two stable modification as bodycentered cubic (bcc), and rhombohedra (rh), they can be stabilized by choosing appropriate deposition either under condition or synthesis method. High sensitivity towards toxic gases NO2 and NH3 are well-known atmospheric pollutants that are responsible for smog and acid rain, and need to be detected in trace amounts in atmospheric conditions. In2O3 has been widely used for detection of NO2 and NH3 molecules in part per million (ppm) concentrations.


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ROBERT H BORK 15 x 0,5 x 22 cm Kolektif Mdpi AG 29 Ekim 2011 28 Şubat 2018 30 Ekim 2011 18,9 x 0,4 x 24,6 cm 18,9 x 0,3 x 24,6 cm ERWIN N GRISWOLD 1 Ocak 2017 18,9 x 0,6 x 24,6 cm 28 Ekim 2011 Additional Contributors 3 Ocak 2017 18,9 x 0,2 x 24,6 cm 18,9 x 0,5 x 24,6 cm WADE H MCCREE
okumak okumak kayıt olmadan
Sürüm ayrıntıları
yazar Noor Malik Saadoun al-musawi Selma M.H Al-Jawad Saryia D.M AL-Algawi
isbn 10 3659835455
isbn 13 978-3659835452
Yayımcı LAP LAMBERT Academic Publishing
Boyutlar ve boyutlar 15 x 0.61 x 22 cm
Tarafından yayınlandı Syntheses of ITO Thin Film by DC-sputtering as Gas Sensor: prepared of indium oxide with different doping concentration with sn by using DC- sputtering deposition 23 Mayıs 2020

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